Infineon has partnered with Nvidia to develop gallium nitride power conversion technology for 800 volt DC data centre architectures, the German chipmaker announced at Nvidia’s GTC Berlin conference. The agreement builds on a May 2025 partnership, detailed in October 2025, that focused on serviceable, hot swappable 800 volt server racks.
The new work focuses on high voltage intermediate bus converters, the stage that steps the main bus voltage feeding accelerator cards down to a lower voltage rail, from which downstream stages generate the core and point of load rails AI processors need. Infineon said the multi stage approach reduces distribution losses while meeting limits on board area, thermals and uptime, and that 800 volt DC is being introduced alongside existing AC and lower voltage DC architectures as an additional option for higher density compute.
The gallium nitride case is speed. Infineon says GaN switches faster than silicon and with lower losses, enabling switching frequencies up to 1 megahertz at the converter stage, which lets magnetics and passive components shrink, increasing power density and reducing board height. That matters, the company said, as rack power levels approach the megawatt range. Its GaN portfolio covers 800 volt to 50 volt, 800 volt to 12 volt and 800 volt to 6 volt conversion, paired with its controller and driver families, and it also offers converter solutions in silicon and silicon carbide.
AI is fundamentally reshaping the demands we place on power infrastructure, and semiconductors are at the heart of solving that challenge, chief executive Jochen Hanebeck said. The deal follows Infineon’s agreement last month with Skeleton Technologies to explore architectures for the entire AI data centre power chain, and an earlier partnership with LS Electric on DC infrastructure. Power conversion, once a commodity line item, is becoming one of the contested layers of the AI stack, and Infineon is bidding to own it from grid to core.